The present invention provides a double gated transistor and a method for forming the same that results in improved device performance and density. The preferred embodiment of the present invention provides a double gated transistor with asymmetric gate doping, where one of the double gates is doped...http://www.google.fr/patents/US20030111686?utm_source=gb-gplus-shareBrevet US20030111686 - METHOD FOR FORMING ASYMMETRIC DUAL GATE TRANSISTOR
METHOD FOR FORMING ASYMMETRIC DUAL GATE TRANSISTOR
Numéro de demande: 09/683,316 Numéro de publication: US 2003/0111686 A1 Date de dépôt: 13 déc. 2001 Brevet délivré: US6610576 ( Date de délivrance 26 août 2003)
