A nonvolatile charge trap memory device and a method to form the same are described. The device includes a channel region having a channel length with <100> crystal plane orientation. The channel region is between a pair of source and drain regions and a gate stack is disposed above the channel regi...http://www.google.fr/patents/US7880219?utm_source=gb-gplus-shareBrevet US7880219 - Nonvolatile charge trap memory device having <100> crystal plane channel orientation
