An object is to provide a method for manufacturing an SOI substrate, by which defective bonding can be prevented. An embrittled layer is formed in a region of a semiconductor substrate at a predetermined depth; an insulating layer is formed over the semiconductor substrate; the outer edge of the semiconductor...http://www.google.fr/patents/US7666757?utm_source=gb-gplus-shareBrevet US7666757 - Method for manufacturing SOI substrate
