A dynamic random access memory capacitor and to a method for producing the same are described. A first (bottom) electrode of the capacitor has a grained surface made of tungsten silicide placed on a tungsten silicide layer which is disposed near a surface of a electrode body. The graining of the tungsten...http://www.google.fr/patents/US20020036312?utm_source=gb-gplus-shareBrevet US20020036312 - Miniaturized capacitor with solid-state dielectric, in particular for integrated semiconductor memories, E.G. DRAMS, and method for fabricating such a capacitor
Miniaturized capacitor with solid-state dielectric, in particular for ...
Numéro de demande: 09/935,624 Numéro de publication: US 2002/0036312 A1 Date de dépôt: 23 août 2001 Brevet délivré: US6642565 ( Date de délivrance 4 nov. 2003)
