An electrically erasable programmable read only memory (EEPROM) having a non conducting charge trapping dielectric, such as silicon nitride, sandwiched between two silicon dioxide layers acting as electrical insulators is disclosed. The invention includes a method of programming, reading and erasing...http://www.google.fr/patents/US6552387?utm_source=gb-gplus-shareBrevet US6552387 - Non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
Non-volatile electrically erasable and programmable semiconductor memory ...
