The semiconductor memory device includes a variable resistance device having a solid electrolyte in a three-dimensional structure. The variable resistance device includes a first electrode; the solid electrolyte, which has at least two regions with different heights, formed on the first electrode; and...http://www.google.fr/patents/US7732799?utm_source=gb-gplus-shareBrevet US7732799 - Semiconductor memory device with three dimensional solid electrolyte structure, and manufacturing method thereof
Semiconductor memory device with three dimensional solid electrolyte ...
