One aspect of the present invention relates to a system and method for improving memory retention in flash memory devices. Retention characteristics may be enhanced by nitridating the bottom silicon dioxide layer of the ONO dielectric. To further mitigate charge leakage within the memory cell, the charge...http://www.google.fr/patents/US6750157?utm_source=gb-gplus-shareBrevet US6750157 - Nonvolatile memory cell with a nitridated oxide layer
Nonvolatile memory cell with a nitridated oxide layer
