This invention pertains to a method of fabricating a MRAM structure and the resulting structure. The MRAM structure of the invention has the pinned layer recessed within a trench with the upper magnetic layer positioned over it. The method of MRAM fabrication utilizes a spacer processing technique, whereby...http://www.google.fr/patents/US6358756?utm_source=gb-gplus-shareBrevet US6358756 - Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme
