A phase change memory may have reduced reverse bias current by providing a N-channel field effect transistor coupled between a bipolar transistor and a conductive line such a row line. By coupling the gate of the MOS transistor to the row line, reverse bias current in unselected cells or in the standby...http://www.google.fr/patents/US6576921?utm_source=gb-gplus-shareBrevet US6576921 - Isolating phase change material memory cells
