A method for forming a shallow trench isolation structure. A mask layer having an opening is formed over a substrate to pattern a shallow trench. A sloped spacer is formed on the sidewalls of the opening. The mask layer and the spacer are used as a hard mask, and a portion of the substrate is removed...http://www.google.fr/patents/US6033968?utm_source=gb-gplus-shareBrevet US6033968 - Method for forming a shallow trench isolation structure
Method for forming a shallow trench isolation structure
