The present invention aims to provide high integration of a nonvolatile semiconductor memory device having lots of flash memory cells without causing a reduction in its operating speed. A width taken along a gate-width direction, of a lower conductor film for a floating gate electrode is made thinner...http://www.google.fr/patents/US20020158273?utm_source=gb-gplus-shareBrevet US20020158273 - Nonvolatile semiconductor memory device and a method of manufacturing the same
Nonvolatile semiconductor memory device and a method of manufacturing the same
Numéro de demande: 09/973,022 Numéro de publication: US 2002/0158273 A1 Date de dépôt: 10 oct. 2001 Brevet délivré: US6646303 ( Date de délivrance 11 nov. 2003)
