A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper...http://www.google.fr/patents/US7776741?utm_source=gb-gplus-shareBrevet US7776741 - Process for through silicon via filing
