Embodiments of the invention provide a method of forming a chalcogenide material containing device, and particularly resistance variable memory elements. A stack of one or more layers is formed over a substrate. The stack includes a layer of chalcogenide material and a metal, e.g., silver, containing...http://www.google.fr/patents/US20050202588?utm_source=gb-gplus-shareBrevet US20050202588 - Method of forming a chalcogenide material containing device
Method of forming a chalcogenide material containing device
Numéro de demande: 10/796,109 Numéro de publication: US 2005/0202588 A1 Date de dépôt: 10 mars 2004 Brevet délivré: US7098068 ( Date de délivrance 29 août 2006)
