For controlling unwanted production of crystal defects from corners of isolated regions in a complete dielectric isolation structure, after at least one trench or groove is provided through a mask of an insulating film in a semiconductor substrate adhered to an insulating film of a base substrate, the...http://www.google.fr/patents/US5084408?utm_source=gb-gplus-shareBrevet US5084408 - Method of making complete dielectric isolation structure in semiconductor integrated circuit
Method of making complete dielectric isolation structure in semiconductor ...
