A metallization structure having a substantially flat surface can be formed on a semiconductor substrate by forming first and second insulating layers on the substrate. The second insulating layer is selectively removed to form grooves therein. Then, a metallic material layer is conformably formed. The...http://www.google.fr/patents/US4520041?utm_source=gb-gplus-shareBrevet US4520041 - Method for forming metallization structure having flat surface on semiconductor substrate
Method for forming metallization structure having flat surface on ...
