An AND flash memory of the type wherein a memory cell is constituted of n-type semiconductor regions (a source and a drain) formed in a p-type well of a semiconductor substrate and three gates (including a floating gate, a control gate and a selective gate) is manufactured. In the manufacture, arsenic...http://www.google.fr/patents/US7282411?utm_source=gb-gplus-shareBrevet US7282411 - Method of manufacturing a nonvolatile semiconductor memory device
Method of manufacturing a nonvolatile semiconductor memory device
