In a non-volatile memory, memory cells have respective floating gates formed of a first polysilicon and respective control gates formed of a second polysilicon. Further, in the non-volatile memory, peripheral circuits include transistors having respective gates formed of the first polysilicon. In addition,...http://www.google.fr/patents/US6417044?utm_source=gb-gplus-shareBrevet US6417044 - Non-volatile memory and memory of manufacturing the same
Non-volatile memory and memory of manufacturing the same
