Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising:...http://www.google.fr/patents/US5739589?utm_source=gb-gplus-shareBrevet US5739589 - Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same
Semiconductor integrated circuit device process for fabricating the same and ...
