A thin film transistor with self-aligned source and drain regions is fabricated, in one embodiment, by forming an opening (124) in a dielectric layer (118) which overlies a substrate (116). A semiconductive sidewall spacer (130) is formed around the perimeter (126) of the opening (124) and adjacent to...http://www.google.fr/patents/US5374573?utm_source=gb-gplus-shareBrevet US5374573 - Method of forming a self-aligned thin film transistor
Method of forming a self-aligned thin film transistor
