A process is disclosed for forming an integrated circuit device, such as an EPROM device, with a floating gate electrode with a discontinuous phase of metal silicide formed on a surface thereof is described. The process for forming such a discontinuous phase of metal silicide on the surface of a polysilicon...http://www.google.fr/patents/US5498558?utm_source=gb-gplus-shareBrevet US5498558 - Integrated circuit structure having floating electrode with discontinuous phase of metal silicide formed on a surface thereof and process for making same
Integrated circuit structure having floating electrode with discontinuous ...
