A process for manufacturing a phase change memory cell, comprising the steps of: forming a resistive element; forming a delimiting structure having an aperture over the resistive element; forming a memory portion of a phase change material in the aperture, the resistive element and the memory portion...http://www.google.fr/patents/US20070057341?utm_source=gb-gplus-shareBrevet US20070057341 - Self-aligned process for manufacturing a phase change memory cell and phase change memory cell thereby manufactured
Self-aligned process for manufacturing a phase change memory cell and phase ...
Numéro de demande: 10/824,631 Numéro de publication: US 2007/0057341 A9 Date de dépôt: 14 avr. 2004 Brevet délivré: US7244956 ( Date de délivrance 17 juil. 2007)
