The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. ...http://www.google.fr/patents/US20050199954?utm_source=gb-gplus-shareBrevet US20050199954 - Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain
Methods for forming strained-semiconductor-on-insulator device structures by ...
Numéro de demande: 11/128,628 Numéro de publication: US 2005/0199954 A1 Date de dépôt: 13 mai 2005 Brevet délivré: US7588994 ( Date de délivrance 15 sept. 2009)
