A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11{overscore (2)}0} or {10{overscore (1)}0} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization...http://www.google.fr/patents/US20050205884?utm_source=gb-gplus-shareBrevet US20050205884 - Semiconductor light emitting devices including in-plane light emitting layers
Semiconductor light emitting devices including in-plane light emitting layers
Numéro de demande: 10/805,424 Numéro de publication: US 2005/0205884 A1 Date de dépôt: 19 mars 2004 Brevet délivré: US7808011 ( Date de délivrance 5 oct. 2010)
