First and second flash memory cells or transistors, operating in the linear region of operation, are provided with different threshold values by providing different charges on their respective floating gates. The first of the pair of flash memory transistors is "over-erased" until it has a negative threshold...http://www.google.fr/patents/US6396739?utm_source=gb-gplus-shareBrevet US6396739 - Reference voltage generator using flash memory cells
Reference voltage generator using flash memory cells
