A low concentration impurity diffusion region is formed with good controllability even in case of using a low heat resistant substrate. When doping a semiconductor layer, after forming the semiconductor layer on the substrate, the amount of the dopant ion adsorbed on a surface of the semiconductor layer...http://www.google.fr/patents/US6984552?utm_source=gb-gplus-shareBrevet US6984552 - Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor element
Method for doping semiconductor layer, method for producing thin film ...
