High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced...http://www.google.fr/patents/US6965128?utm_source=gb-gplus-shareBrevet US6965128 - Structure and method for fabricating semiconductor microresonator devices
Structure and method for fabricating semiconductor microresonator devices
