Seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect...http://www.google.fr/patents/US20030080345?utm_source=gb-gplus-shareBrevet US20030080345 - Single crystal GaN substrate, method of growing same and method of producing same
Single crystal GaN substrate, method of growing same and method of producing ...
Numéro de demande: 10/246,559 Numéro de publication: US 2003/0080345 A1 Date de dépôt: 19 sept. 2002 Brevet délivré: US6667184 ( Date de délivrance 23 déc. 2003)
