This invention relates to thin film transistors having a sloped drain region suitable for high integrated elements and the method for fabricating the same. The thin film transistor comprising a substrate, a gate pole formed on the central part of the substrate, a semiconductor layer...http://www.google.fr/patents/US5818067?utm_source=gb-gplus-shareBrevet US5818067 - Thin film transistor and method for fabricating thereof
Thin film transistor and method for fabricating thereof
