An SOI semiconductor device, for example, a DRAM device, wherein a dummy pattern layer of substantially the same thickness as a charge storage layer constituting part of a capacitor is formed by the same material as the layer in a cell nonformation region wherein memory cells are not formed around a...http://www.google.fr/patents/US5371032?utm_source=gb-gplus-shareBrevet US5371032 - Process for production of a semiconductor device having a cladding layer
Process for production of a semiconductor device having a cladding layer
