At an effective exhaust speed of 1200 liter/s, high frequency power with power surface density of 4.5 W/cm.sup.2 is made to discharge high density plasma, thereby carrying out dry etching. With a gas residence time of 100 ms or less, a gas flow rate controller is provided which has a response time substantially...http://www.google.fr/patents/US5368685?utm_source=gb-gplus-shareBrevet US5368685 - Dry etching apparatus and method
