A method of forming a nonvolatile semiconductor memory device of the present invention comprises: an isolation film formed on a semiconductor substrate of one conductivity type; a floating gate which is formed in an active region isolated by said isolation film so as to be disposed in a gap between adjacent...http://www.google.fr/patents/US6136648?utm_source=gb-gplus-shareBrevet US6136648 - Nonvolatile semiconductor memory device and a method of fabricating the same
Nonvolatile semiconductor memory device and a method of fabricating the same
