There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600.degree. C. and being partially coated with a silicon oxide film formed by electronic cyclotron...http://www.google.fr/patents/US5372958?utm_source=gb-gplus-shareBrevet US5372958 - Process for fabricating a thin film semiconductor device
Process for fabricating a thin film semiconductor device
