A nonvolatile memory cell is formed in an embedded P-well without the necessity of including an overlaying control gate. As a result, normal logic process technology may be utilized to form the nonvolatile memory cell. Through the use of substrate hot electron injection and the formation of a lateral...http://www.google.fr/patents/US5896315?utm_source=gb-gplus-shareBrevet US5896315 - Nonvolatile memory
