In a method of filling a contact hole of a semiconductor device, a layer of conducting material, such as a metal silicide, is formed on side walls of the contact hole, and metal is selectively deposited on the bottom of the contact hole and on the layer of metal silicide on the side walls of the contact...http://www.google.fr/patents/US4898841?utm_source=gb-gplus-shareBrevet US4898841 - Method of filling contact holes for semiconductor devices and contact structures made by that method
Method of filling contact holes for semiconductor devices and contact ...
