FLASH memory circuitry includes an array area and peripheral circuitry area. Multiple series of spaced isolation trenches are provided. At least one of the series of spaced trench isolation regions is formed in a semiconductor substrate within the FLASH peripheral circuitry area. At least some of the...http://www.google.fr/patents/US6690051?utm_source=gb-gplus-shareBrevet US6690051 - FLASH memory circuitry
