A non-volatile storage cell in a Fin Field Effect Transistor (FinFET) and a method of forming an Integrated Circuit (IC) chip including the non-volatile storage cell. Each FET includes a control gate along one side of a semiconductor (e.g., silicon) fin, a floating gate along an opposite of the fin and...http://www.google.fr/patents/US7087952?utm_source=gb-gplus-shareBrevet US7087952 - Dual function FinFET, finmemory and method of manufacture
Dual function FinFET, finmemory and method of manufacture
