An SOI substrate having a single crystal semiconductor layer with high surface planarity is manufactured. A semiconductor substrate is doped with hydrogen, whereby a damaged region which contains large quantity of hydrogen is formed. After a single crystal semiconductor substrate and a supporting substrate...http://www.google.fr/patents/US20090098710?utm_source=gb-gplus-shareBrevet US20090098710 - METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR ...
Numéro de demande: 12/246,571 Numéro de publication: US 2009/0098710 A1 Date de dépôt: 7 oct. 2008 Brevet délivré: US7799658 ( Date de délivrance 21 sept. 2010)
