Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to...http://www.google.fr/patents/US7408809?utm_source=gb-gplus-shareBrevet US7408809 - Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
Method and apparatus for programming single-poly pFET-based nonvolatile ...
