A semiconductor fabrication process includes forming an etch stop layer (ESL) overlying a buried oxide (BOX) layer and an active semiconductor layer overlying the ESL. A gate electrode is formed overlying the active semiconductor layer. Source/drain regions of the active semiconductor layer are etched...http://www.google.fr/patents/US7494856?utm_source=gb-gplus-shareBrevet US7494856 - Semiconductor fabrication process using etch stop layer to optimize formation of source/drain stressor
Semiconductor fabrication process using etch stop layer to optimize ...
