A double -doped In0.34 Al0.66As0.85 Sb0.15/InP heterostructure field-effect transistor has been successfully grown by metalorganic chemical vapor deposition for the first time. Electron mobilities can be enhanced without sacrificing the carrier densities. A turn-on voltage as high as 1 V along with an...http://www.google.fr/patents/US6429468?utm_source=gb-gplus-shareBrevet US6429468 - In0.34A10.66AsSb0.15/InP HFET utilizing InP channels
