A semiconductor device and method of manufacture thereof is provided. According to one embodiment, a semiconductor device is formed by forming a trench within a substrate. An oxide layer is formed within the trench and portions of the oxide layer are removed to expose one or more portions of the substrate...http://www.google.fr/patents/US5846862?utm_source=gb-gplus-shareBrevet US5846862 - Semiconductor device having a vertical active region and method of manufacture thereof
Semiconductor device having a vertical active region and method of ...
