An improved method of forming insulated gate field effect transistors is described. In accordance with the method, gate electrodes are formed from metal such as aluminum together with wirings electrically connecting the gate electrodes. The gate electrodes are anodic oxidized by dipping them as an anode...http://www.google.fr/patents/US5576225?utm_source=gb-gplus-shareBrevet US5576225 - Method of forming electric circuit using anodic oxidation
Method of forming electric circuit using anodic oxidation
