A method and system for providing a bipolar transistor is described. The method and system include providing a compound base region including includes a compound box extension, providing an emitter region, and providing a collector region. The emitter region is coupled with the base region. The SiGe...http://www.google.fr/patents/US20070102729?utm_source=gb-gplus-shareBrevet US20070102729 - Method and system for providing a heterojunction bipolar transistor having SiGe extensions
Method and system for providing a heterojunction bipolar transistor having ...
