A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a chalcogenide glass region is provided with a plurality of alternating tin chalcogenide and metal layers proximate thereto. The method of forming the device comprises sputtering the alternating tin chalcogenide...http://www.google.fr/patents/US7274034?utm_source=gb-gplus-shareBrevet US7274034 - Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
Resistance variable memory device with sputtered metal-chalcogenide region ...
