A method for preparing a bonding pad on an integrated circuit wafer by the steps of depositing a conductive seed layer (104) on the bonding pad; depositing a metal layer (301, 302, and 303) over a portion of the conductive seed layer; and immersing the wafer in an etchant solution (501) to remove the...http://www.google.fr/patents/US20050048798?utm_source=gb-gplus-shareBrevet US20050048798 - Method for chemical etch control of noble metals in the presence of less noble metals
Method for chemical etch control of noble metals in the presence of less ...
Numéro de demande: 10/653,548 Numéro de publication: US 2005/0048798 A1 Date de dépôt: 2 sept. 2003 Brevet délivré: US6979647 ( Date de délivrance 27 déc. 2005)
