The present invention relates to low dielectric constant nanoporous silica films and to processes for their manufacture. A substrate, e.g., a wafer suitable for the production of an integrated circuit, having a plurality of raised lines and/or electronic elements present on its surface, is provided with...http://www.google.fr/patents/US6395651?utm_source=gb-gplus-shareBrevet US6395651 - Simplified process for producing nanoporous silica
Simplified process for producing nanoporous silica
