A thin-film semiconductor element provided on a channel area with a channel protection layer, characterized by the fact that a source electrode layer and a drain electrode layer respectively have overlapping areas on the channel protection layer, the side walls of the source electrode layer and the drain...http://www.google.fr/patents/US5614731?utm_source=gb-gplus-shareBrevet US5614731 - Thin-film transistor element having a structure promoting reduction of light-induced leakage current
Thin-film transistor element having a structure promoting reduction of light ...
