An arrangement for masked beam lithography by means of electrically charged particles for the imaging of structures of a mask on a substrate arranged behind it, with a substantially punctiform particle source (Q) and an extraction system (Ex) for a specific type of charged particles which ...http://www.google.fr/patents/US5742062?utm_source=gb-gplus-shareBrevet US5742062 - Arrangement for masked beam lithography by means of electrically charged particles
Arrangement for masked beam lithography by means of electrically charged ...
