In accordance with one embodiment of the invention, a nonvolatile memory array is encased in a P-tank, and the P-tank encased in a deep N-tank, the two tanks separating the memory array from the substrate and from the other circuitry of the integrated memory circuit. The deep N-tank allows application...http://www.google.fr/patents/US5504708?utm_source=gb-gplus-shareBrevet US5504708 - Flash EEPROM array with P-tank insulated from substrate by deep N-tank
Flash EEPROM array with P-tank insulated from substrate by deep N-tank
