The gate electrode of a crystalline TFT is constructed as a clad structure which consists of a first gate electrode, a second gate electrode and a third gate electrode, thereby to enhance the thermal resistance of the gate electrode. Besides, an n-channel TFT is provided with a low-concentration impurity...http://www.google.fr/patents/US20020139980?utm_source=gb-gplus-shareBrevet US20020139980 - SEMICONDUCTOR DEVICE
Numéro de demande: 09/447,574 Numéro de publication: US 2002/0139980 A1 Date de dépôt: 23 nov. 1999 Brevet délivré: US6501098 ( Date de délivrance 31 déc. 2002)
